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| SHINDENGEN Schottky Rectifiers (SBD) Dual S1ZAS4 40V 1.2A FEATURES *oe SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Array APPLICATION *oe Switching OUTLINE DIMENSIONS Case : 1Z Unit : mm i power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit -40*150 *Z Storage TemperatureTstg Operating Junction Temperature Tj 150 *Z V 40 V Maximum Reverse Voltage RM Repetitive Peak SurgeRRSM width 0.5ms, duty 1/40 VReverse Voltage Pulse 45 V 1.2 50Hz sine wave, R-load, On alumina substrate, 1 element Average Rectified Forward Current IO 50Hz sine wave, R-load, On alumina substrate, 2 element 0.9* A 50Hz sine wave, R-load, On glass-epoxy substrate, 1 eleme 1.0 50Hz sine wave, R-load, On glass-epoxy substrate, 2 eleme 0.72* 40 A Peak Surge Forward I 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125 Current FSM P Reverse width 160 W Repetitive Peak SurgeRRSM Power 10Es, Rating of per diode, Tj=25*Z Pulse *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit FF Forward Voltage V I=1A, Pulse measurement, Rating of per diode Max.0.55 V I V=VM Pulse measurement, Rating of per diode R R R, Max.1mA Reverse Current R Typ.65pF Junction Capacitance Cj f=1MHz, V Rating of per diode =10V, AEjl junction to lead Max.25 junction to ambient, On alumina substrate, 1 element ope Max.93 Thermal Resistance AEja junction to ambient, On alumina substrate, 2 element ope Max.140* *Z/W Max.120 junction to ambient, On glass-epoxy substrate, 1 element o Max.186* junction to ambient, On glass-epoxy substrate, 2 element o *-*Raitng of per diode F Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1ZAS4 Forward Voltage 10 Forward Current IF [A] 1 Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 0.1 Pulse measurement per diode 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S1ZAS4 Junction Capacitance f=1MHz Tl=25C TYP per diode Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] S1ZAS4 1000 Reverse Current 100 Tl=150C [MAX] Reverse Current IR [mA] 10 Tl=150C [TYP] Tl=125C [TYP] 1 Tl=100C [TYP] Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] S1ZAS4 2.5 per diode Reverse Power Dissipation Reverse Power Dissipation PR [W] 2 DC D=0.05 0.1 0.2 1.5 0.3 1 0.5 0.5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T S1ZAS4 2 per diode Forward Power Dissipation Forward Power Dissipation PF [W] 1.5 DC D=0.8 1 0.05 0.5 0.1 0.2 0.3 SIN 0.5 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T S1ZAS4 2.5 1-element conduction Derating Curve Average Rectified Forward Current IO [A] 2 DC D=0.8 Alumina substrate Soldering land 1mm Conductor layer 20m Substrate thickness 0.64mm 1.5 0.5 SIN 0.3 0.2 0.1 1 0.5 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T S1ZAS4 2 Derating Curve Average Rectified Forward Current IO [A] 2-element conduction, per diode Alumina substrate Soldering land 1mm Conductor layer 20m Substrate thickness 0.64mm 1.5 DC D=0.8 0.5 SIN 0.3 0.2 1 0.5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T S1ZAS4 2 1-element conduction Derating Curve Average Rectified Forward Current IO [A] DC 1.5 D=0.8 Glass-epoxy substrate Soldering land 1mm Conductor layer 35m 0.5 1 SIN 0.3 0.2 0.5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T S1ZAS4 1.6 Derating Curve Average Rectified Forward Current IO [A] 1.4 1.2 1 0.8 0.6 0.4 0.2 0 2-element conduction, per diode Glass-epoxy substrate Soldering land 1mm Conductor layer 35m DC D=0.8 0.5 SIN 0.3 0.2 0.1 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T S1ZAS4 60 Peak Surge Forward Capability IFSM 10ms 10ms 50 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 40 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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